P-CONDUCTING AMORPHOUS SILICON ALLOY WITH A LARGE BAND GAP AND MANUFACTURING PROCESS THEREFOR Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2Įnergy Conversion Devices, Inc., 48084 Troy, Mich. Related Child Applications (1) Application Numberįamily ID=43216115 Family Applications (2) Application Numberįamily Applications After (1) Application NumberĬited By (1) * Cited by examiner, † Cited by third party Publication numberįamilies Citing this family (3) * Cited by examiner, † Cited by third party Publication numberĬitations (99) * Cited by examiner, † Cited by third party Publication number Pin striped thin film solar module for street lampĪpplications Claiming Priority (2) Application Number Priority Applications (1) Application Number US29/338,554 Pin striped thin film solar module for street lamp The ornamental design for a pin striped thin film solar module for street lamp, as shown and described. 239000010409 thin film Substances 0.000 title claims description 3.Status Active legal-status Critical Current Anticipated expiration legal-status Critical Links (F/K/A STION CORPORATION), AND CM MANUFACTURING (F/K/A STION CORPORATION) Assigned to STION CORPORATION reassignment STION CORPORATION CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). SECURITY AGREEMENT Assignors: DEVELOPMENT SPECIALIST, INC., SOLELY IN ITS CAPACITY AS THE ASSIGNEE FOR THE BENEFIT OF THE CREDITORS OF CM MANUFACTURING, INC. Assignors: STION CORPORATION Assigned to HETF SOLAR INC. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: WIETING, ROBERT, YANG, FRANK Publication of USD628332S1 publication Critical patent/USD628332S1/en Application granted granted Critical Assigned to CM MANUFACTURING, INC. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Application filed by CM Manufacturing Inc filed Critical CM Manufacturing Inc Priority to US29/338,554 priority Critical patent/USD628332S1/en Assigned to STION CORPORATION reassignment STION CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Original Assignee CM Manufacturing Inc Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Active Application number US29/338,554 Inventor Frank Yang Robert Wieting Current Assignee (The listed assignees may be inaccurate. Google Patents Pin striped thin film solar module for street lampĭownload PDF Info Publication number USD628332S1 USD628332S1 US29/338,554 US33855409F USD628332S US D628332 S1 USD628332 S1 US D628332S1 US 33855409 F US33855409 F US 33855409F US D628332 S USD628332 S US D628332S Authority US United States Prior art keywords thin film street lamp solar module film solar striped thin Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents USD628332S1 - Pin striped thin film solar module for street lamp Copyright © 1998 John Wiley & Sons, Ltd.USD628332S1 - Pin striped thin film solar module for street lamp A Zn(Se,OH) x thickness below 7 nm has been found to be optimum for achieving a homogeneous and compact buffer film on CIGSS, with open-circuit photovoltage V oc=535 mV, fill factor FF=70♷6% and a high short-circuit photocurrent density J sc=36♱ mA cm −2. For device optimization, the thickness and good surface coverage were controlled by XPS–UPS photoemission spectroscopy. The CIGSS absorber was fabricated by Siemens Solar Industries (California). A total-area conversion efficiency of 13♷% was certified by the Frauenhofer Institute for Solar Energy Systems. With the aim of developing Cd-free chalcopyrite-based thin-film solar cells, Zn(Se,OH) x buffer layers were deposited by CBD on polycrystalline Cu(In,Ga)(S,Se) 2 (CIGSS). The highest efficiency for CIGS-based thin-film solar cells has been achieved with CdS buffer layers prepared by a solution growth method known as chemical bath deposition (CBD). Cu(In,Ga)Se 2 (CIGS) and related semiconducting compounds have demonstrated their high potential for high-efficiency thin-film solar cells.
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